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Authors
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Chae, S. ; Choi, W.J. ; Fotev, I. ; Bittrich, E. ; Uhlmann, P. ; Schubert, M. ; Makarov, D. ; Wagner, J. ; Pashkin, A. ; Fery, A.
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Title
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Stretchable thin film mechanical-strain-gated switches and logic gate functions based on a soft tunneling barrier
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Date
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14.10.2021
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Number
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59681
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Abstract
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Mechanical-strain-gated switches are cornerstone components of material-embedded circuits that perform logic operations without using conventional electronics. This technology requires a single material system to exhibit three distinct functionalities: strain-invariant conductivity and an increase or decrease of conductivity upon mechanical deformation. Herein, mechanical-strain-gated electric switches based on a thin-film architecture that features an insulator-to-conductor transition when mechanically stretched are demonstrated. The conductivity changes by nine orders of magnitude over a wide range of tunable working strains (as high as 130%). The approach relies on a nanometer-scale sandwiched bilayer Au thin film with an ultrathin poly(dimethylsiloxane) elastomeric barrier layer; applied strain alters the electron tunneling currents through the barrier. Mechanical-force-controlled electric logic circuits are achieved by realizing strain-controlled basic (AND and OR) and universal (NAND and NOR) logic gates in a single system. The proposed material system can be used to fabricate material-embedded logics of arbitrary complexity for a wide range of applications including soft robotics, wearable/implantable electronics, human–machine interfaces, and Internet of Things.
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Publisher
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Advanced Materials
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Wikidata
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Q112169002
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Citation
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Advanced Materials 33 (2021) 2104769
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DOI
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https://doi.org/10.1002/ADMA.202104769
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Tags
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