Authors Chae, S. ; Choi, W.J. ; Fotev, I. ; Bittrich, E. ; Uhlmann, P. ; Schubert, M. ; Makarov, D. ; Wagner, J. ; Pashkin, A. ; Fery, A.
Title Stretchable thin film mechanical-strain-gated switches and logic gate functions based on a soft tunneling barrier
Date 14.10.2021
Number 59681
Abstract Mechanical-strain-gated switches are cornerstone components of material-embedded circuits that perform logic operations without using conventional electronics. This technology requires a single material system to exhibit three distinct functionalities: strain-invariant conductivity and an increase or decrease of conductivity upon mechanical deformation. Herein, mechanical-strain-gated electric switches based on a thin-film architecture that features an insulator-to-conductor transition when mechanically stretched are demonstrated. The conductivity changes by nine orders of magnitude over a wide range of tunable working strains (as high as 130%). The approach relies on a nanometer-scale sandwiched bilayer Au thin film with an ultrathin poly(dimethylsiloxane) elastomeric barrier layer; applied strain alters the electron tunneling currents through the barrier. Mechanical-force-controlled electric logic circuits are achieved by realizing strain-controlled basic (AND and OR) and universal (NAND and NOR) logic gates in a single system. The proposed material system can be used to fabricate material-embedded logics of arbitrary complexity for a wide range of applications including soft robotics, wearable/implantable electronics, human–machine interfaces, and Internet of Things.
Publisher Advanced Materials
Wikidata Q112169002
Citation Advanced Materials 33 (2021) 2104769

Back to list