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Authors Chae, S.; Choi, W.; Lee, S.-H.; Besford, Q. A.; Fery, A.
Title Tunneling barrier-integrated gold nanofilms for negative strain gauging with near-zero energy consumption
Date 24.02.2025
Number 0
Abstract Wireless strain sensors with minimal power needs are essential for long-term monitoring in energy-limited environments. We present a soft tunneling barrier-integrated gold thin film for negative strain sensing with near-zero energy consumption. The device features a strain-induced transition from an insulating to a metallic state, increasing conductivity by 9 orders of magnitude under a controlled strain. It consists of Au-PDMS-Au nanofilm layers, where the Au structures are near the percolation threshold and the PDMS layer acts as a tunneling barrier. Under strain, thinning due to the Poisson effect lowers the barrier’s potential height, enabling electron tunneling and forming an electrical path. With a standby power consumption of ∼10–5 mW over 106 times lower than conventional sensors (∼12.5 mW), this device is ideal for real-time, long-term stationary structural monitoring in multiple locations.
Publisher American Chemical Society
Wikidata
Citation Nano Letters 25 (2025) 3556-3564
DOI https://doi.org/10.1021/acs.nanolett.4c06365
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